Enhanced performance of 275-nm AlGaN-based deep-ultraviolet LEDs via internal-roughed sapphire and SiO2-antireflection film

-antireflection film improves the LEEs of transverse electric (TE) and transverse magnetic (TM) polarized light by 1.6% and 108%, respectively. These results offer the potential for large-scale, low-cost industrial production of high-efficiency DUV LEDs.