Enhancing High-Voltage Stability of CsPbBr₃ Radiation Detectors Through Surface Treatment and Electrode Replacement

CsPbBr3 represents a promising candidate for room-temperature semiconductor radiation detection. However, under high bias voltages, the high voltage stability of the detector decreases and baseline noise increases due to surface ion migration and electrode reactions. To address these challenges, we present a methodology designed to enhance the high-voltage stability of CsPbBr3 single crystals. This involves employing surface polishing and passivation to suppress surface ion migration, coupled with the replacement of the metal anode electrode with a carbon electrode, renowned for its inertness. These measures effectively curtail the amplification of leakage current and reduction in stability triggered by the reaction between bromide ions and the metal electrode. Moreover, we conduct an evaluation of the rectification characteristics, photo-detection response, and charge carrier transport properties of the resultant C-CsPbBr3-Bi Schottky-type devices. These devices demonstrated superior capabilities in X-ray detection and gamma spectral detection. The findings significantly contribute to the ongoing development of room-temperature semiconductor radiation detectors for X/gamma-ray applications.