Performance optimization of Sn15Sb85 phase change material via introducing multilayer structure

The superlattice-like Sn15Sb85/Ti phase change films were fabricated by magnetron sputtering, and the effects of Ti layer on the phase change properties and crystal structure of the Sn15Sb85 films were systematically researched. With the addition of Ti layers, the crystallization temperature of the films increased, indicating their thermal stability and data retention were improved. X-ray diffraction results reflect that the presence of Ti layers restrains grain growth and refines grain size. X-ray photoelectron spectroscopy analysis reveals that the incorporation of Ti layers enhances the interatomic binding energy and improves the stability. X-ray reflectivity analysis and atomic force microscopy indicate that the Sn15Sb85/Ti films have smaller volume change and smoother surface than pure Sn15Sb85 films, implying the better interfacial property and reliability. The T-type phase change memory cell based on Sn15Sb85/Ti thin film has faster operation speed (100 ns) and lower power consumption (2.6×10-12 J) than the conventional Ge2Sb2Te5 material. The results show that the superlattice-like Sn15Sb85/Ti film will be a potential candidate with outstanding properties in thermostability and power consumption.