碳量子点
兴奋剂
量子点
纳米技术
材料科学
碳纤维
氮气
光电子学
化学
复合数
有机化学
复合材料
作者
Tianqi Yu,Jie Li,Wei Lei,Suhaidi Bin Shafe,Mohd Nazim Mohtar,Nattha Jindapetch,Paphavee van Dommelen,Zhiwei Zhao
出处
期刊:Nano Research
[Springer Science+Business Media]
日期:2024-08-27
卷期号:17 (11): 10049-10057
被引量:3
标识
DOI:10.1007/s12274-024-6966-x
摘要
Carbon quantum dots (CQDs) have been used in memristors due to their attractive optical and electronic properties, which are considered candidates for brain-inspired computing devices. In this work, the performance of CQDs-based memristors is improved by utilizing nitrogen-doping. In contrast, nitrogen-doped CQDs (N-CQDs)-based optoelectronic memristors can be driven with smaller programming voltages (−0.6 to 0.7 V) and exhibit lower powers (78 nW/0.29 µW). The physical mechanism can be attributed to the reversible transition between C–N and C=N with lower binding energy induced by the electric field and the generation of photogenerated carriers by ultraviolet light irradiation, which adjusts the conductivity of the initial N-CQDs to implement resistance switching. Importantly, the convolutional image processing based on various cross kernels is efficiently demonstrated by stable multi-level storage properties. An N-CQDs-based optoelectronic reservoir computing implements impressively high accuracy in both no noise and various noise modes when recognizing the Modified National Institute of Standards and Technology (MNIST) dataset. It illustrates that N-CQDs-based memristors provide a novel strategy for developing artificial vision system with integrated in-memory sensor and computing.
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