2-kV Vertical β -Ga 2 O 3 MOSFET With p-Cu 2 O Body via Barrier-Modulated Electron Transport

We proposed a vertical enhancement-mode (E-mode) trench MOSFET based on an all-oxide$\text {n}^{+}-\text {ZnO} / \text {p}-\text {Cu}_{2} \text {O} / \text {n}-\text {Ga}_{2} \text {O}_{3}$heterojunction, using$\text {p}-\text {Cu}_{2} \text {O}$as the p-body layer to address the p-type doping bottleneck of$\beta $- Ga2O3. Unlike conventional inversion-channel MOSFETs that rely on minority carrier inversion to form a conductive channel, the$\beta $- Ga2O3heterojunction MOSFETs operate via a gate-controlled barrier-modulated electron transport mechanism, in which gate bias modulates the heterojunction barrier height to control electron injection. The devices exhibit a threshold voltage ($V_{\text {th}~}$) of 7 V, a$I_{\text {on}~} / I_{\text {off}~}$of$10^{6}$, a high breakdown voltage (BV) of 2000 V, and a specific on-resistance ($\boldsymbol {R}_{\text {on,sp}~}$) of$2.93 \Omega \cdot {~\text {cm}}^{2}$. This work may provide a novel architecture for high-performance vertical Ga2O3power MOSFETs.