Investigation of the Doping Profile for Ion Implants and Rapid Annealing in Silicon Via an Improved Method

Nowadays, applications of ion implantation and rapid annealing in semiconductor fabrication are widespread. The doping profile in silicon determines the depth and lateral spread of p-n junctions. An optimal combination of ion implantation and annealing conditions for tuning the electrical properties of device usually takes a lot of time and money. In this paper, we present a cheap and efficient method for investigation the implanted impurity distribution on Sentaurus TCAD tools. The simulated boron/phosphorus/arsenic doping profiles are in good agreement with SIMS measurements for a wide range of implant energies and annealing temperature. In addition, the simulation of resistance in different depths is also investigated.