异质结
材料科学
光探测
光电探测器
光电子学
X射线光电子能谱
钝化
纳米技术
物理
图层(电子)
核磁共振
作者
Chunhui Lu,Wen Dong,Yunling Zou,Zeyun Wang,Jieqiong Tan,Xing Bai,Nan Ma,Yanqing Ge,Qiyi Zhao,Xinlong Xu
标识
DOI:10.1021/acsami.2c19762
摘要
To mimic the natural photosynthesis system, a Z-scheme heterostructure is proposed as a viable and effective strategy for efficient solar energy utilization such as photocatalysis and photoelectrochemical (PEC) water splitting due to the high carrier separation efficiency, fast charge transport, strong redox, and wide light absorption. However, it remains a huge challenge to form a direct Z-scheme heterostructure due to the internal electric-field restriction and vital band-alignment at the interface. Herein, the van der Waals heterostructure based on the allotrope SnSe2 and SnSe is designed and synthesized by a two-step vapor phase deposition method to overcome the limitation in the formation of the Z-scheme heterostructure for the first time. The Z-scheme heterostructure of SnSe2/SnSe is confirmed by X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, PEC measurement, density functional theory calculations, and water splitting. Strikingly, the PEC photodetectors based on the Z-scheme heterostructure show a synergistic effect of superior stability from SnSe and fast photoresponse from SnSe2. As such, the SnSe2/SnSe Z-scheme heterostructure shows a good photodetection performance in the ultraviolet to visible wavelength range. Furthermore, the photodetector shows a faster response/recovery time of 13/14 ms, a higher photosensitivity of 529.13 μA/W, and a higher detectivity of 4.94 × 109 Jones at 475 nm compared with those of single components. Furthermore, the photodetection stability of the SnSe2/SnSe is also greatly improved by a-thin-Al2O3-layer passivation. The results imply the promising rational design of a direct Z-scheme heterostructure with efficient charge transfer for high performance of optoelectronic devices.
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