Etch Selectivity Mechanisms of Implanted Over Pristine SiN Materials in NH3/NF3 Remote Plasma for Quasi Atomic Layer Etching with the Smart Etch Concept
作者
Vincent Renaud,E. Pargon,Camille Petit-Étienne,Jean‐Paul Barnes,N. Rochat,L. Vallier,G. Cunge,O. Joubert