材料科学
凝聚态物理
图层(电子)
硼
各向异性
垂直的
Atom(片上系统)
磁各向异性
热稳定性
拳头
结晶学
核磁共振
纳米技术
化学
磁化
磁场
光学
物理
生理学
量子力学
嵌入式系统
几何学
数学
有机化学
计算机科学
生物
作者
Yanjie Wang,Xiaoyuan Nie,Junhui Song,Chao Wang,Fan Yang,Yaodan Chi,Xiaotian Yang,Shen Ye,Chunyan Xu
标识
DOI:10.1016/j.rinp.2023.106239
摘要
Using fist-principles calculations, we study the B atom of diffusion process and the origin of the perpendicular magnetic anisotropy in MgO|CoFe|Ta structures with boron. It is found that B atoms are more likely to enter the Ta layer than FeCo layer and MgO layer. This result is in good agreement with that of the experimental and theoretical results. Furthermore, we elucidate the physical origin of the interfacial PMA Ta|CoFe|MgO structure with B element. We find that interfacial PAM come from both the MgO|CoFe and CoFe|Ta layer interfaces. These findings provide a comprehensive understanding of the PMA and point towards the possibility to achieve the advanced-node STT-MRAM with high thermal stability.
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