Study of Dopant Activation in Arsenic-Implanted Laser Annealed Si By Differential Hall Effect Metrology (DHEM)

Ultra-violet (UV) laser annealing (LA) is a promising technology that is being investigated for next-generation CMOS processing. UV-LA’s unique capability of activating dopants very near to the surface due to the very shallow penetration depth can be critical for achieving very low-contact resistivity materials and structures. Here we present a detailed analysis of the effects of UV-LA on very highly As-doped material. Physical and chemical data-sets (SIMS, XTEM and FFTM) are compared with the electrical depth profiles obtained using Differential Hall Effect Metrology (DHEM).