Ultralow impact energy dynamic secondary ion mass spectrometry with nonfully oxidizing surface conditions

Main accent of this research at ultralow impact energy sputtering is a primary beam species selection to facilitate data interpretation and to improve the quantification of very shallow boron implants. The effects present during the very low energy sputtering with O2+ produce the nonuniform sputtering and ion yield variation within the first nanometer of SIMS depth profiling. The experiments using sputtering beam formed in the ion source supplied with different gas mixture including a variable oxygen fraction were performed. It was concluded that the modification of sputtering conditions by reducing the O2+ content in the sputtering beam is capable of providing an accurate characterization of low energy boron implantation wafers.