空位缺陷
单层
材料科学
密度泛函理论
三元运算
极化(电化学)
消光比
分子物理学
光学
光电子学
凝聚态物理
物理
纳米技术
化学
波长
计算化学
程序设计语言
计算机科学
物理化学
作者
Jia Liu,Jinyan Niu,Yonghong Ma,Feng Chi,Zichuan Yi,Liming Liu
出处
期刊:Optics Express
[Optica Publishing Group]
日期:2023-06-19
卷期号:31 (17): 28040-28040
被引量:4
摘要
The linear photogalvanic effect (LPGE) is investigated by using the non-equilibrium Green’s function (NEGF) technique combined with density functional theory (DFT) in monolayer Na 2 MgSn. We consider the cases of three different central regions, which are pure Na 2 MgSn, Na-vacancy, and Pb-substituted. It is found that both pure and defective Na 2 MgSn monolayers induce photoresponse under linearly polarized light. The photoresponse varies periodically as a form of either sinusoidal or cosinoidal function of the polarization angle. In the near-infrared and visible ranges, the photoresponse is more sensitive to the long wave range of visible light. In the case of single-atom defects, the photoresponse with Na-vacancy is larger than that of pb-substitution defects. Compared with the other two central regions, the maximum extinction ratio (ER) of Na-vacancy is larger, so it has higher polarization sensitivity. When the location of Na-vacancy is adjusted, the photoresponse changes obviously, and the Na 1*- vacancy has the largest photoresponse. With the increase of the Na-vacancy concentration, the photoresponse changes nonlinearly but is smaller than that of a single vacancy. A small bias voltage can greatly improve the photoresponse. Our results suggest an effective method to enhance the photoresponse and show the promise of Na 2 MgSn monolayers in optical detection.
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