A Physics-Based SPICE Compact Model for β-Ga₂O₃ Schottky Barrier Diode (SBD) Aiming at Circuit Design: A Demonstration Through Modeling of AC Rectification Characteristics

This article presents a comprehensive, physics-based compact model for β-gallium oxide (Ga2O3) Schottky barrier diodes (SBDs), designed for circuit simulation and compatible with SPICE-based simulators using Verilog-A code. The model captures temperature-dependent behavior and reverse recovery effects while accounting for high-level injection and current-dependent series resistance. The model is verified against the dc characteristics of our self-fabricated 100-and 250-μm-diameter SBDs. The model also accurately simulates the ac rectification characteristics of the 250-μm SBD for 10-and 20-V peak-to-peak sinusoidal inputs from 100 Hz to 1 MHz. Finally, the Lissajous plots are provided to illustrate theI–Vcharacteristics during rectification.