蒙特卡罗方法
碰撞
感应耦合等离子体
电离
电子
联轴节(管道)
原子物理学
等离子体
振荡(细胞信号)
模式(计算机接口)
电容感应
电子密度
电容耦合
物理
化学
离子
分布函数
温度电子
计算物理学
等离子体参数
碰撞频率
感应耦合
模耦合
耦合参数
等离子体原子发射光谱
作者
Zhaoyu Chen,Zili Chen,Yu Wang,Wei Jiang,Yonghua Ding,Donghui Xia,Ya Zhang
标识
DOI:10.1088/1361-6595/ae05c6
摘要
Abstract This study investigates the transition mechanism from E-mode to H-mode in inductively coupled plasma (ICP) systems by employing a two-dimensional implicit electrostatic particle-in-cell/Monte Carlo collision simulation. By analyzing the electron density, energy, potential distribution, and heating dynamics under different inductive coupling powers, we identified a critical transition interval in the E–H mode transformation. This interval is characterized by a sharp increase in plasma density and a shift of the electron energy probability function from a bi-Maxwellian distribution to a single Maxwellian distribution. In E-mode, capacitive coupling effects dominate, and sheath oscillation heating leads to the non-uniformity of electron density and energy distribution. As the power increases, inductive coupling effects become dominant, driving efficient ionization through high-energy electrons and homogenizing the plasma parameters. In H-mode, inductive coupling heating becomes the primary mechanism, reducing sheath effects and enhancing energy redistribution through electron collisions. This study elucidates the dynamic mechanism of the E–H mode transition and its associated heating processes, providing a theoretical basis for optimizing ICP technology applications.
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