Piezo- and photo-voltage field-effect transistor

材料科学 光电子学 电压 场效应晶体管 晶体管 阈值电压 异质结 半导体 信道长度调制 电气工程 工程类
作者
Wenbo Peng,Chenhong Wang,Fangpei Li,Yongning He
出处
期刊:Nano Energy [Elsevier BV]
卷期号:105: 108025-108025 被引量:6
标识
DOI:10.1016/j.nanoen.2022.108025
摘要

Photo-voltage field-effect transistor (FET), consisting of one semiconductor as conduction channel and another semiconductor as light absorber, utilizes photo-generated charges induced photo-voltage at the heterojunction interface originated from photovoltaic effect to change the conduction channel thickness and thus the conduction current. Despite of the illumination induced photo-voltage, applied strain can also produce piezoelectric polarization charges and hence a piezo-voltage at the heterojunction interface to modulate the conduction channel thickness. Here we theoretically study the basic characteristics of an n-ZnO/p-Si heterojunction FET, successfully demonstrate the modulation behaviors of FET’s characteristics by both piezo-voltage and photo-voltage, and explain the physical principles that govern the piezo-voltage and photo-voltage modulation. With a tensile strain of ε = 0.15‰ or a 0.5 μW/cm2 UV illumination, the saturation drain current IDsat of FET is enhanced by about 25%. Besides, the influences of structural parameters and doping concentrations on piezo-voltage modulation behavior are systematically studied and the guidance for piezo-voltage FET design is given. We also propose a piezo- and photo-voltage field-effect transistor by combining the piezo-voltage and photo-voltage together and illustrate the cooperation of them. Our results show that not only electric gate voltage VGS, but also strain induced piezo-voltage and illumination induced photo-voltage, can effectively control the conduction channel thickness and current of heterojunction FET, and present the potential of piezo- and photo-voltage field-effect transistor in the fields of piezotronics and piezo-phototronics.
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