Review of self-powered solar-blind photodetectors based on Ga2O3

Due to the broad potential applications range in both military and civilian domains, solar-blind photodetectors based on the ultrawide-bandgap semiconductor Ga2O3, with high photosensitivity and low false alarm rate, have been widely concerned. With the rapid development of modern society, photodetectors are gradually being modified to exhibit high energy efficiency, miniaturization, and excellent performance. Self-powered photodetectors based on the photovoltaic effect can detect optical signals without an external power source, emerging as a promising candidate for next-generation photodetectors. This review summarizes the state-of-the-art research on self-powered solar-blind photodetectors based on Ga2O3. We classify the currently reported Ga2O3-based self-powered solar-blind photodetectors into Schottky junction (including metal-semiconductor and graphene-semiconductor types), heterojunction (including all-inorganic and inorganic-organic types), phase junction, and photoelectrochemical (PEC). The fundamental properties of Ga2O3, the basic working principles of self-powered photodetectors, and the device processing developments have been summarized. Finally, conclusions regarding recent advances, remaining challenges, and prospects are presented and discussed.