单层
范德瓦尔斯力
材料科学
基质(水族馆)
图层(电子)
凝聚态物理
透射电子显微镜
超导电性
化学物理
薄膜
结晶学
密度泛函理论
扫描电子显微镜
扫描透射电子显微镜
原子力显微镜
电子结构
电子显微镜
表面结构
自组装单层膜
纳米技术
作者
Sims, Hunter,Leonard, Donovan N,Birenbaum, Axiel Yaël,Ge, Zhuozhi,Berlijn, Tom,Li Lian,Cooper, Valentino R.,Chisholm, Matthew F.,Pantelides, Sokrates T.
出处
期刊:Cornell University - arXiv
日期:2018-05-08
被引量:2
标识
DOI:10.48550/arxiv.1805.03293
摘要
The sensitive dependence of monolayer materials on their environment often gives rise to unexpected properties. It was recently demonstrated that monolayer FeSe on a SrTiO$_3$ substrate exhibits a much higher superconducting critical temperature T$_C$ than the bulk material. Here, we examine the interfacial structure of FeSe / SrTiO$_3$ and the effect of an interfacial Ti$_{1+x}$O$_2$ layer on the increased T$_C$ using a combination of scanning transmission electron microscopy and density functional theory. We find Ti$_{1+x}$O$_2$ forms its own quasi-two-dimensional layer, bonding to both the substrate and the FeSe film by van der Waals interactions. The excess Ti in this layer electron-dopes the FeSe monolayer in agreement with experimental observations. Moreover, the interfacial layer introduces symmetry-breaking distortions in the FeSe film that favor a T$_C$ increase. These results suggest that this common substrate may be functionalized to modify the electronic structure of a variety of thin films and monolayers.
科研通智能强力驱动
Strongly Powered by AbleSci AI