共栅
线性化
宽带
带宽(计算)
电阻器
放大器
电气工程
电子工程
晶体管
CMOS芯片
噪声系数
工程类
物理
电信
非线性系统
电压
量子力学
作者
Heng Zhang,Xiaohua Fan,Edgar Sanchez Sinencio
出处
期刊:IEEE Journal of Solid-state Circuits
[Institute of Electrical and Electronics Engineers]
日期:2009-01-29
卷期号:44 (2): 320-330
被引量:258
标识
DOI:10.1109/jssc.2008.2011033
摘要
This work proposes a practical linearization technique for high-frequency wideband applications using an active nonlinear resistor, and analyzes its performance with Volterra series. The linearization technique is applied to an ultra-wideband (UWB) cascode common gate Low Noise Amplifier (CG-LNA), and two additional reference designs are implemented to evaluate the linearization technique - a standard (without linearization) cascode CG-LNA and a single-transistor CG-LNA. The single-transistor CG-LNA achieves +6.5 to +9.5 dBm IIP3, 10 dB (max.) gain, and 2.9 dB (min.) NF over a 3-11 GHz bandwidth (BW); the LNA consumes 2.4 mW from a 1.3 V supply. The cascode linearized LNA achieves +11.7 to +14.1 dBm IIP3, 11.6 dB (max.) gain, and 3.6 dB (min.) NF over 1.5 to 8.1 GHz; the cascode LNA consumes 2.62 mW from a 1.3 V supply. Experimental results show that the linearization technique improves the cascode LNA's IIP3 by a factor of 3.5 to 9 dB over a 2.5-10 GHz frequency range.
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