37.3: Suppressing the Trap‐assisted Recombination for High Performance InP/ZnS Green Quantum‐dot Light‐emitting Diodes

The performance of InP/ZnS quantum dot light‐emitting diodes are seriously limited by the large amount of surface traps on InP/ZnS quantum dots and the efficient exciton quenching at the interface between quantum dots and ZnO transport layer. This work provided physical understanding on these problems and approaches to address them. As a result, high efficiency InP/ZnS quantum dot light‐emitting diodes were fabricated.