发光二极管
材料科学
光电子学
量子效率
二极管
紫外线
量子阱
自发辐射
光学
量子点
电子
物理
激光器
量子力学
作者
Huabin Yu,Zhongjie Ren,Haochen Zhang,Jiangnan Dai,Chang Chen,Shibing Long,Haiding Sun
出处
期刊:Optics Express
[The Optical Society]
日期:2019-09-12
卷期号:27 (20): A1544-A1544
被引量:53
摘要
AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) still suffer from poor quantum efficiency and low optical power. In this work, we proposed a DUV LED structure that includes five unique AlxGa1-xN quantum barriers (QBs); Each QB has a linear-increment of Al composition by 0.03 along the growth direction, unlike those commonly used flat QBs in conventional LEDs. As a result, the electron and hole concentration in the active region was considerably increased, attributing to the success of the electron blocking effect and enhanced hole injection efficiency. Importantly, the optical power was remarkably improved by 65.83% at the injection current of 60 mA. After in-depth device optimization, we found that a relatively thinner graded QB layer could further boost the LED performance because of the increased carrier concentrations and enhanced electron and hole wave function overlap in the QW, triggering a much higher radiative recombination efficiency. Hence, the proposed graded QBs, which have a continuous increment of Al composition along the growth direction, provide us with an effective solution to boost light output power in the pursuit of high-performance DUV emitters.
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