材料科学
热辐射计
热电效应
光电子学
电阻式触摸屏
光电导性
红外线的
功勋
光电探测器
探测器
光学
热导率
热电材料
热电冷却
物理
电气工程
工程类
复合材料
热力学
作者
Aapo Varpula,Kirsi Tappura,Jonna Tiira,Kestutis Grigoras,Kai Viherkanto,Jouni Ahopelto,Mika Prunnila
出处
期刊:Society of Photo-Optical Instrumentation Engineers (SPIE) Conference Series
日期:2020-02-26
被引量:1
摘要
The state-of-the-art infrared (IR) photodetectors are either thermal detectors (bolometers) or quantum detectors (photovoltaic and photoconductive detectors). Compared to quantum IR photodetectors, IR bolometers are slower and less sensitive but in turn, they offer lower cost without need for cooling and exotic materials (e.g. HgCdTe). Phonon/photon engineered materials offer interesting routes for enhancing room-temperature IR bolometers. We have recently demonstrated experimentally a nano-thermoelectric bolometer for long-wave IR detection. The technology utilizes efficient thermoelectric transducers based on silicon nanomembranes, which have an enhanced thermoelectric figure of merit arising from the low thermal conductivity stemming from the nano-scale thickness. For the absorption of the IR radiation the nano-thermoelectric bolometer utilizes a nanomembrane based quarter-wave resistive absorber, which is also known as the Salisbury screen. The use of nanomembranes in both the thermoelectric transducer and the absorber results in a very small thermal mass, and thereby high speed for the detector. In this article, we present an analytical model for quarter-wave resistive absorbers (i.e. Salisbury screens). It can be applied both in radio frequency (RF) and optical applications. The results of the analytical model are compared with the ones obtained with the transfer-matrix method using the optical material data available in the literature. We present also a device model of the nano-thermoelectric IR detector and estimate the full performance of this technology.
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