化学物理
溶剂
扩散
指针(用户界面)
相(物质)
动能
碳化硅
一步到位
理论(学习稳定性)
材料科学
化学
热力学
化学工程
计算机科学
物理
经典力学
有机化学
复合材料
工程类
机器学习
计算机视觉
作者
Xinbo Liu,Yifan Dang,Koki Suzuki,Chen Zhu,Wancheng Yu,Shunta Harada,Miho Tagawa,Toru Ujihara
标识
DOI:10.1016/j.jcrysgro.2021.126425
摘要
For solution growth of silicon carbide, it is significant to understanding the evolutionary mechanism of step bunching. This study infers that solute’s incorporation into steps and transport together determines step bunching progress. The occurrence of step bunching is due to the depletion of solute in the region with high step density, caused by a high step kinetic coefficient. On the other hand, by promoting the transport of the solute in the solution, the step speed becomes uniform, thereby the step bunching can be prevented. Furthermore, we proposed a non-dimensional Damköhler number for crystal growth in step-flow mode. It correlates incorporation rates with bulk diffusion rates and can build a phase map of growth rates and step bunching stability. Several solvents are located in the phase map, demonstrating the possible usage of the phase map as a pointer for solvent designing.
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