材料科学
异质结
电场
压电
电阻率和电导率
电阻和电导
复合材料
薄膜
凝聚态物理
光电子学
纳米技术
电气工程
量子力学
物理
工程类
作者
Jingjiao Zhang,Weilong Kong,Liang Liu,Changjian Li,Liang Fang,Yuan Ping Feng,Rujun Tang,Xiaodong Su,Jingsheng Chen
摘要
The VO2/Pb(Zr0.52Ti0.48)O3 (PZT) thin film heterostructure device was first grown to investigate the piezoelectric control of resistance switching in Vanadium dioxide (VO2) films with a PZT underlayer. The results show that upon applying a continuous gate-electric-field (Eb) on the heterostructure, a butterfly shape resistance (R) vs. Eb curve of VO2 was observed. This R-Eb curve agrees well with the strain vs. electric-field “butterfly” curve of the underlying PZT, indicating that the resistance changes in VO2 were induced by piezoelectric lattice strain at the VO2/PZT interface. A repeated pulsed Eb modulation of VO2 resistance was further demonstrated. The resistance of the VO2 film decreases under compressive strain and increases under tensile strain. The resistance of change of the VO2 film under different strains has been explained using the first-principles calculations. The above results show that repeatable resistance switching in the VO2 film can be realized in the VO2/PZT heterostructure with a small Eb around room temperature.
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