单层
异质结
材料科学
光电子学
联轴节(管道)
过渡金属
载流子
电荷(物理)
纳米技术
化学
物理
生物化学
量子力学
催化作用
冶金
作者
Sefaattin Tongay,Wen Fan,Jun Kang,Joonsuk Park,Ünsal Koldemir,Joonki Suh,Deepa S. Narang,Kai Liu,Jie Ji,Jingbo Li,Robert Sinclair,Junqiao Wu
出处
期刊:Nano Letters
[American Chemical Society]
日期:2014-05-20
卷期号:14 (6): 3185-3190
被引量:753
摘要
Band offsets between different monolayer transition metal dichalcogenides are expected to efficiently separate charge carriers or rectify charge flow, offering a mechanism for designing atomically thin devices and probing exotic two-dimensional physics. However, developing such large-area heterostructures has been hampered by challenges in synthesis of monolayers and effectively coupling neighboring layers. Here, we demonstrate large-area (>tens of micrometers) heterostructures of CVD-grown WS2 and MoS2 monolayers, where the interlayer interaction is externally tuned from noncoupling to strong coupling. Following this trend, the luminescence spectrum of the heterostructures evolves from an additive line profile where each layer contributes independently to a new profile that is dictated by charge transfer and band normalization between the WS2 and MoS2 layers. These results and findings open up venues to creating new material systems with rich functionalities and novel physical effects.
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