抛光
化学机械平面化
泥浆
氧化剂
材料科学
碳化硅
脆性
图层(电子)
基质(水族馆)
化学工程
碳化物
复合材料
化学
工程类
地质学
有机化学
海洋学
作者
Hiroshi Nitta,Akira Isobe,Hong Park,Takashi Hirao
标识
DOI:10.1143/jjap.50.046501
摘要
In this study, the high removal rate silicon carbide (SiC) chemical mechanical polishing (CMP) slurry was researched to reduce polishing process time. At first, oxidizing reaction was researched to understand the effectiveness of oxidizer in SiC polishing mechanism and then oxidizer was optimized to increase reactivity for high SiC removal at the point of kinds and amount. Next research was to find out additives to reduce polishing time by making brittle layer at SiC surface. This brittle layer can faster be removed at polishing process than without additives. As a result, through this research, we could achieve high 4H-SiC removal CMP Slurry using optimization of oxidizer and additives.
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