存水弯(水管)
材料科学
聚合物
光伏系统
半导体
纳米技术
工程物理
计算机科学
光电子学
电气工程
物理
工程类
复合材料
气象学
作者
Han Yan,Joseph G. Manion,Mingjian Yuan,F. Pelayo Garcı́a de Arquer,George R. McKeown,Serge Beaupré,Mario Leclerc,Edward H. Sargent,Dwight S. Seferos
标识
DOI:10.1002/adma.201601553
摘要
Intrinsic traps in organic semiconductors can be eliminated by trap-filling with F4-TCNQ. Photovoltaic tests show that devices with F4-TCNQ at parts per thousand concentration outperform control devices due to an improved fill factor. Further studies confirm the trap-filling pathway and demonstrate the general nature of this finding. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.
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