Recent advances and challenges in the MOCVD growth of indium gallium nitride: A brief review

This article discusses the key challenges and the recent breakthroughs in realizing high-quality indium (In)-rich indium gallium nitride (InGaN) epilayers and InGaN/GaN multiple quantum wells (QWs) by using the metal–organic chemical vapor deposition (MOCVD) technique. The main challenges such as the difficulties in growing high-quality In-rich and p-type InGaN are identified. The issues related to compressive strain and piezoelectric polarization induced by the large lattice mismatch between GaN and InGaN, and the degradation of InGaN QW quality due to In-rich clusters are also reviewed.