暗电流
光电探测器
肖特基势垒
热离子发射
肖特基二极管
光电子学
光电导性
半导体
材料科学
物理
分析化学(期刊)
电子
化学
二极管
色谱法
量子力学
作者
Yang Xu,Xuanhu Chen,Dong Zhou,Fangfang Ren,Jianjun Zhou,Song Bai,Hai Lu,Shulin Gu,Rong Zhang,Youdou Zheng,Jiandong Ye
标识
DOI:10.1109/ted.2019.2906906
摘要
In this paper, carrier transport and gain mechanisms are exploited in the β-Ga 2 O 3 -based metal- semiconductor-metal photodetectors with Au back-to-back Schottky contacts. The resultant devices exhibit a low dark current of <;10 pA at 10 V, a sustaining bias over 500 V without electric breakdown, a self-powered sensitivity with a UVC-to-visible rejection ratio over 103, and a photo-to-dark current ratio of 50 at 473 K, indicative of its strong operation capability at high temperature and in harsh environments. Temperature-dependent-current-voltage features reveal that the dark reverse leakage is dominated by the thermionic field emission at low electric field and Poole-Frenkel emission from a deep trap level of 0.42 eV under the conduction band at high field, respectively. These negatively charged traps positioned below the Fermi level in the vicinity of Schottky interface capture photogenerated holes and reduce the barrier height upon illumination. The temperature- and bias-dependent photoresponse features are identified in physics that the photoconductive gain as well as slow response speed is originated from the change of barrier height due to trap repopulation.
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