光电探测器
极化(电化学)
各向异性
光电子学
材料科学
肖特基势垒
肖特基二极管
光学
偏振旋转器
偏压
电压
线极化
雷
物理
探测器
砷化镓
半导体
作者
Shaofeng Wen,Changyong Lan,Rui Zhang,Shuren Zhou,Chun Li,Yi Yin,J HO,Yong Liu
标识
DOI:10.1002/lpor.202502842
摘要
ABSTRACT Polarization photodetectors offer significant potential in target recognition, quantum physics, and astronomical observations. However, conventional polarization photodetectors often require additional optical components, increasing the devices' complexity and size. Moreover, the limited polarization ratio in photodetectors utilizing anisotropic materials presents a major challenge, hindering their practical applications. In this study, we introduce an innovative approach using a vertically aligned back‐to‐back Schottky barrier structure, with anisotropic 2D material as the photosensitive unit, to develop a polarization photodetector with an infinite polarization ratio. The distinct differences in light absorption for x ‐ and y ‐polarizations are crucial in creating a 90° shift in polarization‐dependent photocurrents between the top and bottom Schottky diodes. This feature allows for precise modulation of the polarization ratio through bias voltage adjustment, enabling a transition from a finite value to infinity. Significantly high polarization ratios are achieved in ReSe 2 ‐ and PdPSe‐based devices, with values of 2.89 × 10 4 and 300, respectively. Our research offers a simplified design for polarization photodetectors with an infinite polarization ratio, presenting significant potential for advancements in optoelectronics.
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