电容
电容器
材料科学
钻石
氧化物
半导体
光电子学
泄漏(经济)
分析化学(期刊)
电压
电气工程
电极
化学
复合材料
冶金
工程类
宏观经济学
物理化学
经济
色谱法
作者
T. T. Pham,Aurélien Maréchal,Pierre Muret,David Eon,E. Gheeraert,Nicolas Rouger,Julien Pernot
摘要
Metal oxide semiconductor capacitors were fabricated using p-type oxygen-terminated (001) diamond and Al2O3 deposited by atomic layer deposition at two different temperatures 250 °C and 380 °C. Current voltage I(V), capacitance voltage C(V), and capacitance frequency C(f) measurements were performed and analyzed for frequencies ranging from 1 Hz to 1 MHz and temperatures from 160 K to 360 K. A complete model for the Metal-Oxide-Semiconductor Capacitors electrostatics, leakage current mechanisms through the oxide into the semiconductor and small a.c. signal equivalent circuit of the device is proposed and discussed. Interface states densities are then evaluated in the range of 1012eV−1cm−2. The strong Fermi level pinning is demonstrated to be induced by the combined effects of the leakage current through the oxide and the presence of diamond/oxide interface states.
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