Detection Limit of Photoluminescence Method for Determination of Carbon Impurity Concentration in Silicon

We present the detection limit of the photoluminescence method for the determination of carbon impurity concentration in silicon. The detection limit was determined by the signal-to-noise ratio of the G-line from radiation-induced defects, and was estimated at 4×10 ¹³ cm ^-3 under the measurement conditions in accordance with the standard [JIS H0615] for quantification of donor and acceptor impurities in silicon. The limit was extendable down to 2×10 ¹³ cm ^-3 by optimizing the excitation power and sample temperature.