Simulation and modelling of a high-performance trench capacitor for RF applications

The necessity for exact modelling and simulation data of the electrical characteristics of passive on-chip devices has become more and more important. The electrical performance of RF circuits is predominantly restricted by the passives. In this work the RF simulation and characterization for a new trench capacitor in a low loss environment are presented for the first time. The excellent accordance of the modelling data with the measured RF characteristics of this so-called SilCap (silicon capacitor) is shown. An analytical model has been developed which permits the exact circuit simulation of all relevant electrical quantities. The device simulation enables the optimization of the SilCap device geometries.