电场
二次谐波产生
磁场
特征向量
凝聚态物理
本征函数
指数增长
非线性系统
量子阱
密度矩阵
指数函数
量子点
物理
量子
量子力学
数学
数学分析
激光器
作者
Zhihai Zhang,Jianhui Yuan
标识
DOI:10.1016/j.physb.2022.414356
摘要
The second harmonic generation(SHG) and third harmonic generation(THG) of a GaAs/GaAlAs exponential quantum well(QW) are numerically investigated in the presence of applied electric and magnetic field, which are parallel to the QW growth direction. The eigenvalues and corresponding eigenfunctions of the system are obtained by using the finite difference technique . The expression for the second- and third-order susceptibility is given by the density matrix and iterative approach. It is showed that, the SHG and THG not only depend strongly on quantum confinement, but also the intensity of external fields. We have systematically studied the SHG and THG of different confinement QWs by adjusting the structural parameters, as well as the effects of external electric and magnetic fields. We give the optimal system parameters in which the external field effects play important role.
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