可靠性(半导体)
发光二极管
可靠性工程
材料科学
光电子学
工程类
物理
功率(物理)
量子力学
作者
Kefeng Wang,Zehua Chen,Haojie Zhou,Xiaoxiao Ji,Xiuzhen Lu,Luqiao Yin,Jianhua Zhang
标识
DOI:10.1016/j.microrel.2024.115431
摘要
With the Micro-LED display device being widely used in the advanced display fields, the high reliability of device had become one of the key issues for applications of Micro-LED in many display fields such as VR/AR, portable displays, and flexible displays. The 512 × 384 green Micro-LEDs 0.39 in. array with 1700 PPI featuring a pixel pitch of 15 μm was integrated with the substrate by the AuIn flip-chip bonding. The average brightness, electroluminescence (EL) spectra, and I-V characteristics of the Micro-LED device aged at 85 °C/85 % RH for different time were measured to evaluate the optical and electrical reliability of the Micro-LED device. The mechanical reliability of the Micro-LED device after 336 h of aging was evaluated by shear test. The average brightness of the Micro-LED device decreased from 2.08 × 104 nit to 1.64 × 104 nit and the on-resistance of the Micro-LED device increased from 2.30 Ω to 2.82 Ω with the aging time increased to 336 h. The Micro-LED device was broken up with the shear strength value of 12.06 MPa, and the shear strength was only reduced by 8.25 % compared with that measured before aging.
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