Critical Point Drying of Graphene Field‐Effect Transistors Improves Their Electric Transport Characteristics

Abstract A critical point drying (CPD) technique is reported with supercritical CO 2 as a cleaning step for graphene field‐effect transistors (GFETs) microfabricated on oxidized Si wafers, which results in an increase of the field‐effect mobility and a decrease of the impurity doping. It is shown that the polymeric residues remaining on graphene after the transfer process and device microfabrication are significantly reduced after the CPD treatment. Moreover, the CPD effectively removes ambient adsorbates such as water therewith reducing the undesirable p ‐type doping of the GFETs. It is proposed that CPD of electronic, optoelectronic, and photonic devices based on 2D materials as a promising technique to recover their intrinsic properties after the microfabrication in a cleanroom and after storage at ambient conditions.