The optoelectronic synergistic properties based on indium-gallium-zinc oxide neuromorphic transistors

Abstract Inspired by the human visual perception system, optoelectronic devices have attracted growing interest in advanced machine vision systems. Despite significant advancements in optical sensors, the synergy between optoelectronics remains underdeveloped. In this study, we propose a transistor fabricated via magnetron sputtering of indium-gallium-zinc oxide (In: Ga: Zn = 1:1:1 mol%) that serves as an inhibitory device, simulating key biological synaptic functions through its electrical properties, including excitatory postsynaptic currents and paired-pulse facilitation. Furthermore, by exploiting the intrinsic photoresponse characteristics of IGZO and the short-term and long-term memory behaviors induced by optical stimulation, we simulate synapses modulated by light of varying wavelengths. As a phototransistor, this device successfully simulates complex synaptic behaviors, including Morse code. It also simulates the Mach bands, a phenomenon of lateral inhibition observed in biology. Additionally, the optoelectronic effect of the phototransistor is applied in neural network recognition, achieving a recognition rate of 85.8%.