放大器
多尔蒂放大器
存根(电子)
射频功率放大器
宽带
电气工程
阻抗匹配
电子工程
电阻抗
带宽(计算)
计算机科学
材料科学
工程类
电信
作者
Jaekyung Shin,Woojin Choi,Yifei Chen,Hyeongjin Jeon,Sooncheol Bae,Young Chan Choi,Hyunuk Kang,Hyungmo Koo,Young Yun Woo,Kang‐Yoon Lee,Keum Cheol Hwang,Youngoo Yang
出处
期刊:IEEE Access
[Institute of Electrical and Electronics Engineers]
日期:2023-01-01
卷期号:11: 101425-101434
被引量:9
标识
DOI:10.1109/access.2023.3315608
摘要
The load networks of advanced Doherty power amplifiers (DPAs) have traditionally been designed according to the ABCD parameters. In this paper, design conditions as an impedance transformation condition and an effective electrical length were used to design the output matching networks (OMNs) for the carrier and peaking amplifiers of the virtual-stub DPAs (VS-DPAs). An optimization method for the effective electrical length was proposed that was specifically constructed for the load impedances of the carrier amplifier at the low power level to have broadband characteristics through the load-pull simulation. Using the optimized design conditions for broadband design, compact OMNs for the carrier and peaking amplifiers were designed using quasi-lumped components. Moreover, an asymmetric structure with an increased power capacity of the peaking amplifier for the VS-DPA was proposed to compensate for a relatively low peak fundamental current of the peaking amplifier due to its deep class-C operation as well as the extended output back-off (OBO) range of the VS-DPA. To verify the proposed load network, a broadband asymmetric VS-DPA for the 3.3 - 4.2 GHz band was designed and implemented using GaN HEMTs with power capacities of 6 and 10 W. Using a 5G new radio (5G NR) signal with a signal bandwidth of 100 MHz and a peak-to-average power ratio (PAPR) of 7.8 dB, power gain of 8.2 - 9.1 dB, DE of 46.0 - 57.0%, ACLR of better than −45 dBc after DPD linearization at an average power of 35.0 dBm were achieved at the broad frequency range of 3.3 - 4.2 GHz.
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