A Novel Method for Diagnosing Power Electronics Devices Using Elastic Wave Emission

This work is an introduction of acoustic emission (AE) signals used in order to detect the malfunction of selected semiconductor elements. The authors proposed the use of internally generated signals (elastic waves) of acoustic emission leading to the detection of the pre-fail state of switching IGBT transistors. The analysis of the AE signals allows the creation of a reference pattern of properly working transistors and at the same time the identification of abnormal signals, which are generated by a defective element. Unlike many papers, this article shows experimental results demonstrating a comparison of undamaged, properly working and defective IGBT transistors which can be used, for example, as a reference for diagnostic tools. Analysis of the signal in the frequency domain obtained from the faulty transistor (overheated or with damaged casing) shows the presence of additional frequencies which can indicate the imminent occurrence of critical damage.