A Galvanic Isolator Achieving 117-Mb/s Forward Data Transfer in the Presence of 181-kV/μs Common-Mode Transient Interference

Targeting a high data rate (DR) in the presence of common-mode transient (CMT) interference in the isolated gate driver application scenario, we presented an inductively galvanic isolator (GI) consisting of transmitter (TX) and receiver (RX) dies. To eliminate the destructive effects of CMT interference, an adaptive transconductance enhancement (ATE) technique was proposed on the TX side, which enables real-time detection of CMT events and contributes to an enhanced $g_{m}$ to stabilize the oscillator’s operation. For the data transfer, we observed the problem of unequal data symbol durations using the conventional frequency-shift keying (FSK) demodulator, which can lead to shoot-through current or large reverse conduction loss. This problem was solved by the proposed compensated FSK demodulator. Both TX and RX dies in the proposed GI were fabricated in a 0.18- $\mu $ m BCD process. Experimental results verified that the proposed GI demonstrates static CMT immunity (CMTI) up to 299 kV/ $\mu $ s. Furthermore, even in the presence of a severe CMT interference of 181 kV/ $\mu $ s, the GI supports a high DR of 117 Mb/s, corresponding to a DR ratio (DRC) of 67%, with a low bit error rate (BER) of $10^{-8}$ . This extends the state of the art by $3.72\times $ in DRC and $1.13\times$ in dynamic CMTI.