欧姆接触
暗电流
光探测
光电子学
异质结
光电二极管
材料科学
光电探测器
石墨烯
肖特基势垒
肖特基二极管
电流(流体)
纳米技术
图层(电子)
电气工程
工程类
二极管
作者
Xiaoxiao Zhu,Wei Lu,Jing Ning,Jincheng Zhang,Dong Wang,Chi Zhang,Han Li,Xuan Cui,Yu Zhou,Haibin Guo,Yong Wang,Yue Hao
摘要
Van der Waals heterostructure based on 2D materials is a promising technology for high-performance optoelectronic devices because of its tunable bandgaps and optical properties. However, photodetectors with a low dark current and a fast response speed commonly lose their photoresponsivity. The recovery current induced by the Schottky barrier height variation cancels out the device's reverse bias current in this paper, resulting in a quasi-vertical MoSe2 photodiode with ultralow dark current (<1 pA). Simultaneously, rapid electron–hole pair separation occurs at the interface due to the large heterojunction area and the strong interlayer coupling of MoSe2/graphene heterojunction, resulting in a fast response time of 1.5 ms and a high photoresponsivity of 19.72 A/W. Furthermore, the Au/MoSe2 forms a Schottky contact, which is asymmetrical to the Ohmic contact formed by the MoSe2/graphene, enabling the proposed device to achieve high-performance self-powered photodetection. Our work shows an alternative approach to improve the performance of future electronic and optoelectronic applications.
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