光致发光
光电子学
纳米线
材料科学
量子阱
表面等离子体激元
极化子
表面等离子体子
等离子体子
光学
激光器
物理
作者
Talgat Shugabaev,Vladislav O. Gridchin,Ivan Melnichenko,Pavel Bulkin,Artem N. Abramov,Alexey N. Kuznetsov∥,A. A. Maksimova,I. A. Novikov,А. И. Хребтов,Yevgeniy V. Ubyivovk,K. P. Kotlyar,N. V. Kryzhanovskaya,R. R. Reznik,G. É. Cirlin
标识
DOI:10.1002/pssr.202400296
摘要
A significant (up to 4 times) photoluminescence enhancement of single InP/InAsP/InP nanowires transferred onto a silicon oxide‐covered silver layer on silicon substrate with a metal surface roughness level of less than 1 nm and a dielectric thickness of 5 nm has been demonstrated. This phenomenon is explained by the interaction of electron–hole pairs in the semiconductor with surface plasmon polaritons. The photoluminescence kinetics and results of modeling confirm the indicated enhancement mechanism.
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