Resistive Switching Crossbar Arrays Based on Layered Materials

Resistive switching (RS) devices are metal/insulator/metal (MIM) cells that can change their electrical resistance when electrical stimuli are applied between the electrodes, and they can be used to store and compute data. Planar crossbar arrays of RS devices can offer a high integration density (>108 devices/mm2 ) and this can be further enhanced by stacking them three-dimensionally. The advantage of using layered materials (LMs) in RS devices (compared to traditional phase-change materials and metal-oxides) is that their electrical properties can be adjusted with a higher precision. Here we define the key figures-of-merit and procedures to implement LM-based RS devices. We identify and discuss LM-based RS devices fabricated using methods compatible with industry. We focus on small devices (size <9 μm2 ) arranged in crossbar structures, since larger devices may be affected by artefacts, such as grain boundaries and flake junctions. We also discuss how to enhance device performance, so to accelerate the development of this technology. This article is protected by copyright. All rights reserved.