DC and RF performance of an In0.1Ga0.9N/InN high electron mobility transistor

Abstract This paper reports on a theoretical analysis of DC and RF performances of a novel In 0.1 Ga 0.9 N/InN HEMT. A very high cut‐off frequency and attractive DC characteristics have been predicted. A simple analytical model is used to explain the DC characteristics. The cut‐off frequency which has been found more than 0.6 THz for a gate length of 0.1 µm is explained with low‐field mobility. The maximum drain current and transconductance have been found around 1000 mA/mm and 625 mS/mm, respectively. Similar analysis have been performed for the conventional AlGaN/GaN HEMT and compared with the proposed InGaN/InN HEMT. The predicted results are found to be in good agreement with previously published results. The calculated results show that InN‐based HEMT has very high cut‐off frequency and transconductance when compared with the conventional GaN‐based HEMT for the same gate length. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)