Preparation and properties of InGaAsP/InP photodiodes

The various layers of InGaAsP/InP heterostructures have been grown by LPE for PIN and SAM avalanche photodiodes working near 1300 nm. The electrical and optical properties were investigated. With simple run of LPE growth, the low dark current, low capacitance PIN photodiodes have been fabricated. For SAM structure, avalanche gain of M approximately equals 12 near breakdown voltage was measured.