微晶
薄膜
薄膜太阳能电池
材料科学
硒化铜铟镓太阳电池
光电子学
能量转换效率
太阳能电池
工程物理
可再生能源
图层(电子)
纳米技术
电气工程
冶金
工程类
作者
Miguel Contreras,Brian Egaas,K. Ramanathan,J. Hiltner,A. B. Swartzlander,Falah S. Hasoon,R. Noufi
标识
DOI:10.1002/(sici)1099-159x(199907/08)7:4<311::aid-pip274>3.0.co;2-g
摘要
This short communication reports on achieving 18·8% total-area conversion efficiency for a ZnO/CdS/Cu(In,Ga)Se2/Mo polycrystalline thin-film solar cell. We also report a 15%-efficient, Cd-free device fabricated via physical vapor deposition methods. The Cd-free cell includes no buffer layer, and it is fabricated by direct deposition of ZnO on the Cu(In,Ga)Se2 thin-film absorber. Both results have been measured at the National Renewable Energy Laboratory under standard reporting conditions (1000 W/m2, 25°C, ASTM E 892 Global). The 18·8% conversion efficiency represents a new record for such devices (Notable Exceptions) and makes the 20% performance level by thin-film polycrystalline materials much closer to reality. We allude to the enhancement in performance of such cells as compared to previous record cells, and we discuss possible and realistic routes to enhance the performance toward the 20% efficiency level. Published in 1999 by John Wiley & Sons, Ltd. This article is a US government work and is in the public domain in the United States.
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