平版印刷术
计算光刻
下一代光刻
X射线光刻
极紫外光刻
电子束光刻
光刻
纳米技术
材料科学
浸没式光刻
半导体
模版印刷
抵抗
计算机科学
工程物理
光电子学
工程类
图层(电子)
标识
DOI:10.1109/cicc.2009.5280903
摘要
Progress of lithography from the lensless type to lens-based systems using different kinds of photon and electron beams is reported here. The stages of lithography development with their physical principles are linked to the corresponding impacts to IC designers to help them understand the reasons they are more and more restricted. From this vantage point, we look at the prospects of the lithography systems that will handle patterning for 32-nm half pitch and beyond in feasibility and cost.
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