Jonas Geissbühler,Stefaan De Wolf,Antonin Faes,Nicolas Badel,Quentin Jeangros,Andrea Tomasi,Loris Barraud,Antoine Descoeudres,Matthieu Despeisse,Christophe Ballif
出处
期刊:IEEE Journal of Photovoltaics [Institute of Electrical and Electronics Engineers] 日期:2014-05-22卷期号:4 (4): 1055-1062被引量:102
标识
DOI:10.1109/jphotov.2014.2321663
摘要
Copper electroplating is investigated and compared with common silver printing techniques for the front metallization of silicon heterojunction solar cells. We achieve smaller feature sizes by electroplating, significantly reducing optical shadowing losses and improving cell efficiency by 0.4% absolute. A detailed investigation of series resistance contributions reveals that, at maximum power point, a significant part of the lateral charge-carrier transport occurs inside the crystalline bulk, rather than exclusively in the front transparent conductive oxide. This impacts optimization for the front-grid design. Using advanced electron microscopy, we study the inner structure of copper-plated fingers and their interfaces. Finally, a cell efficiency of 22.4% is demonstrated with copper-plated front metallization.