颠簸
薄脆饼
晶圆级封装
互连
可靠性(半导体)
芯片级封装
集成电路封装
晶圆规模集成
材料科学
晶片测试
晶片键合
模具准备
集成电路
晶圆回磨
电子包装
模具(集成电路)
CMOS芯片
基质(水族馆)
计算机科学
电子工程
光电子学
晶片切割
工程类
纳米技术
机械工程
电信
功率(物理)
地质学
物理
海洋学
量子力学
作者
Rafiqul Islam,Chad Brubaker,Paul Lindner,C. Schaefer
标识
DOI:10.1109/asmc.2002.1001606
摘要
The important factors for packaging technology are IC packaging costs, the impact of the package on circuit and system performance, and the reliability of the package. Wafer level packaging technology is a promising solution for future IC generations. This paper reviews the wafer level bumping process and its requirement for thick resist coating and full field aligned exposure. 3D interconnect technology is a viable solution for increasing electronic device functional density and reducing total packaging costs. The critical issue is the ability to align and bond with precision, one micron or less, two silicon wafers or a silicon wafer to another substrate. For CMOS devices, this technology can be applied to chip-scale packaging and also to advanced 3D interconnect processes. In this paper, we describe a new approach to wafer-to-wafer alignment using alignment targets at the bond interface, i.e. face to face wafer alignment (SmartVieW/sup TM/) that relies on precision alignment positioning systems to register and align wafers with one micron or better precision.
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