Colloidal quantum dot-silicon photodetector based on TCAD simulation

Lead sulfide colloidal quantum dots, similar to the nanoscale crystals of most semiconductor crystals, are available in a variety of sizes, shapes, and compositions as well as to make different chemical molecular ligands to modify the surface of the quantum dots and to fabricate functional optoelectronic devices on a variety of substrate materials. The combination of silicon and colloidal quantum dots enables the fabrication of silicon-based compatible quantum dot optoelectronic devices over a wide range of applications. In this paper, the effects of channel doping concentration and channel length on the performance of silicon-based CQD/Si photodetectors are calculated and analyzed from the simulation method. The results show that a suitable doping concentration and a short channel length can improve the performance of the device, which provides a simulation basis for the fabrication of silicon-based compatible arrayed colloidal quantum dot photodetectors.