Effects of Thermal Boundary Resistance on the Thermal Performance of GaN HEMT on Diamond

GaN high power devices experience substantial self-heating that drives operation temperatures beyond a safe and reliable limit, which has led to the consideration of high conductivity substrates. This study presents a coupled experimental and numerical investigation of the effectiveness of CVD-Diamond as a substrate for GaN HEMTs. The study uses a novel that optimizes a thermal model using an experimentally observed thermal response. The model is then used to assess the effect of the GaN-Di interface on the thermal response of GaN-Di HEMTs, which would serve as a guideline for future developments in GaN and Di growth.